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Электронный каталог: Frantskevich, N. V. - Formation of Cone-Shaped Inclusions and Line Defects on the Cz-Si Wafer Surface by the Helium Imp...
Frantskevich, N. V. - Formation of Cone-Shaped Inclusions and Line Defects on the Cz-Si Wafer Surface by the Helium Imp...
Статья
Автор: Frantskevich, N. V.
Acta physica Polonica A: Formation of Cone-Shaped Inclusions and Line Defects on the Cz-Si Wafer Surface by the Helium Imp...
б.г.
ISBN отсутствует
Автор: Frantskevich, N. V.
Acta physica Polonica A: Formation of Cone-Shaped Inclusions and Line Defects on the Cz-Si Wafer Surface by the Helium Imp...
б.г.
ISBN отсутствует
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Статья
Frantskevich, N. V.
Formation of Cone-Shaped Inclusions and Line Defects on the Cz-Si Wafer Surface by the Helium Implantation and DC Nitrogen Plasma Treatment / N. V. Frantskevich, A.V. Mazanik, A. V. Frantskevich, T. Koltunowicz, P. Zukowski // Acta physica Polonica A. – 2011. – Vol.120 N1. – С.105-107. – Режим доступа : http://rep.bntu.by/handle/data/38497.
The general goal of this work is to investigate the defects formed on the surface of the Cz-Si wafers subjected to helium implantation, vacuum annealing and nitrogen plasma treatment. The performed scanning electron microscopy study has shown that in the general case two types of surface defects can be formed: cone-shaped inclusions with the base diameter of 0.2-2 mu m and the ratio of diameter to height of approximately 1:1, as well as crystallographically oriented line defects with the length equal to 0.2-2 mu m. The concentration of these defects depends on the conditions of implantation and plasma treatment
общий = БД Труды научных работников БНТУ : 2011г.
труды сотрудников БНТУ = Факультет информационных технологий и робототехники : кафедра "Техническая физика"
труды сотрудников БНТУ = Физика. Механика. Гидравлика (труды)
Frantskevich, N. V.
Formation of Cone-Shaped Inclusions and Line Defects on the Cz-Si Wafer Surface by the Helium Implantation and DC Nitrogen Plasma Treatment / N. V. Frantskevich, A.V. Mazanik, A. V. Frantskevich, T. Koltunowicz, P. Zukowski // Acta physica Polonica A. – 2011. – Vol.120 N1. – С.105-107. – Режим доступа : http://rep.bntu.by/handle/data/38497.
The general goal of this work is to investigate the defects formed on the surface of the Cz-Si wafers subjected to helium implantation, vacuum annealing and nitrogen plasma treatment. The performed scanning electron microscopy study has shown that in the general case two types of surface defects can be formed: cone-shaped inclusions with the base diameter of 0.2-2 mu m and the ratio of diameter to height of approximately 1:1, as well as crystallographically oriented line defects with the length equal to 0.2-2 mu m. The concentration of these defects depends on the conditions of implantation and plasma treatment
общий = БД Труды научных работников БНТУ : 2011г.
труды сотрудников БНТУ = Факультет информационных технологий и робототехники : кафедра "Техническая физика"
труды сотрудников БНТУ = Физика. Механика. Гидравлика (труды)
